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2SK3812

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3812isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=2.8mΩMAX.(VGS=10V,ID=55A) RDS(on)2=3.7mΩMAX.(VGS=4.5V,ID=55A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3812

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3812isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=2.8m?MAX.(VGS=10V,ID=55A) RDS(on)2=3.7m?MAX.(VGS=4.5V,ID=55A) ?Highcurrentrating

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3812-ZP

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3812isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=2.8mΩMAX.(VGS=10V,ID=55A) RDS(on)2=3.7mΩMAX.(VGS=4.5V,ID=55A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3812-ZP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=110A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SK3812-ZP

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3812isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=2.8m?MAX.(VGS=10V,ID=55A) RDS(on)2=3.7m?MAX.(VGS=4.5V,ID=55A) ?Highcurrentrating

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

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更多2SK3812(0)-ZP-E1供應(yīng)商 更新時(shí)間2025-1-9 16:45:00