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2SK389

N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS)

*1ChipDualType *RecommendedforFirstDifferentialStagesofDCAmplifiers *GoodPairCharacteristics *Complementaryto2SJ109

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK389

HSTM PACKAGE SERIES

Application VHFAmp,FMRFMIX VHFRFAmp,VHFTV Application Highlyfs|LowNoise HighlyfstLowNoise Highlyfs!LowNoise Highlyfs!LowNoise 1ChipHighYfs!LowNoise 1ChipHighYfs!LowNoise Application CondenserMicrophone CondenserMicrophone CondenserMicrophone

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK3891-01R

N-CHANNEL SILICON POWER MOSFET

FUJIPOWERMOSFET Features Highspeedswitching,Lowon-resistance Lowdrivingpower,Avalanche-proof Nosecondarybreakdown Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters SuperFAP-GSeries

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

2SK3892

Silicon N-channel power MOSFET

Forcontactlessrelay,divingcircuitforasolenoid,drivingcircuitforamotor,controlequipmentandswitchingpowersupply Features Gate-sourcesurrendervoltageVGSS:±30guaranteed Avalancheenergycapacityguaranteed:EAS>986mJ High-speedswitching:tf=39ns

PANASONICBATTERYPanasonic Battery Group

松下電器松下電器（中國(guó)）有限公司

2SK3899

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3899isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3m?MAX.(VGS=10V,ID=42A) RDS(on)2=6.5m?MAX.(VGS=4.5V,ID=42A) ?LowCiss:Ciss=5500pFTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3899

MOS Field Effect Transistor

MOSFieldEffectTransistor Features LowOn-stateresistance RDS(on)1=5.3mùMAX.(VGS=10V,ID=42A) RDS(on)2=6.5mùMAX.(VGS=4.5V,ID=42A) LowCiss:Ciss=5500pFTYP.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3899

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3899isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=10V,ID=42A) RDS(on)2=6.5mΩMAX.(VGS=4.5V,ID=42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3899-ZK

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3899isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3m?MAX.(VGS=10V,ID=42A) RDS(on)2=6.5m?MAX.(VGS=4.5V,ID=42A) ?LowCiss:Ciss=5500pFTYP.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3899-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3899isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=10V,ID=42A) RDS(on)2=6.5mΩMAX.(VGS=4.5V,ID=42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3891-01R

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SK3892

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SK3899_15

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3899-ZK

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SK3899(0)-ZK-E1-AZ

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個(gè) 描述：TRANSISTOR

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

詳細(xì)參數(shù)

  • 型號(hào)：

    2SK389

  • 制造商：

    Fuji Electric

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
60000
詢價(jià)
TOSHIBA
23+
ZIP-7
3000
原裝正品假一罰百!可開(kāi)增票!
 詢價(jià)
TOS
23+
20000
正品原裝貨價(jià)格低
 詢價(jià)
TOSHIBA(東芝)
23+
NA/
8735
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價(jià)
TOSHIBA/東芝
2023+
ZIP-7
8700
原裝現(xiàn)貨
 詢價(jià)
TOSHIBA
23+
ZIP-7
9526
詢價(jià)
PANASONIC
23+
TO-220D
7750
全新原裝優(yōu)勢(shì)
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NEC
2339+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
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TOSHIBA
2016+
ZIP-7
3526
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心
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KEXIN
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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更多2SK389供應(yīng)商 更新時(shí)間2025-1-9 16:30:00

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