2STD1665T4分立半導(dǎo)體產(chǎn)品的晶體管-雙極性晶體管（BJT）-單個(gè)規(guī)格書PDF中文資料

2STD1665T4屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極性晶體管（BJT）-單個(gè)。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的2STD1665T4晶體管 - 雙極性晶體管（BJT）- 單個(gè)分立式雙極結(jié)型晶體管 (BJT) 通常在音頻、無線電及其他應(yīng)用中用于構(gòu)建模擬信號(hào)放大功能。作為大批量生產(chǎn)的第一批半導(dǎo)體器件之一，對(duì)于涉及高頻開關(guān)和在大電流或高電壓下工作的應(yīng)用而言，它們的特性相比某些器件類型不占優(yōu)勢(shì)，但對(duì)于需要以極小的噪聲和失真構(gòu)建模擬信號(hào)的應(yīng)用而言，它們?nèi)匀皇鞘走x技術(shù)。

Description

The device is manufactured in NPN Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Features

■ Very low collector to emitter saturation

volatage

■ High current gain characteristic

■ Fast-switching speed

■ Through-hole IPAK (TO-251) power package

in tube (suffix”-1”)

■ Surface mounting DPAK (TO-252) power

package in tape & reel (suffix”T4”)

Applications

■ Ccfl drivers

■ Voltage regulators

■ Relay drivers

■ High efficiency low voltage switching

applications