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30C02CH

Low-FrequencyGeneral-PurposeAmplifierApplications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

30C02CH

BipolarTransistor

BipolarTransistor 30V,0.7A,LowVCE(sat)NPNSingleCPH3 Features ?Largecurrentcapacity ?Lowcollector-to-emittersaturationvoltage(resistance)RCE(sat)typ.=330mΩ[IC=0.7A,IB=35mA] ?Ultrasmallpackagefacilitatesminiaturizationinendproducts ?SmallON-resistance(Ron) Applicat

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

30C02CH-TL-E

BipolarTransistor

BipolarTransistor 30V,0.7A,LowVCE(sat)NPNSingleCPH3 Features ?Largecurrentcapacity ?Lowcollector-to-emittersaturationvoltage(resistance)RCE(sat)typ.=330mΩ[IC=0.7A,IB=35mA] ?Ultrasmallpackagefacilitatesminiaturizationinendproducts ?SmallON-resistance(Ron) Applicat

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

30C02MH

BipolarTransistor30V,0.7A,LowVCE(sat)NPNSingleMCPH3

BipolarTransistor 30V,0.7A,LowVCE(sat)NPNSingleMCPH3 Features ?Largecurrentcapacity ?Lowcollector-to-emittersaturationvoltage(resistance)):RCE(sat)typ=330mΩ[IC=0.7A,IB=35mA] ?Ultrasmallpackagefacilitatesminiaturizationinendproducts ?SmallON-resistance(Ron) ?Ha

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

30C02MH

Low-FrequencyGeneral-PurposeAmplifierApplications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

30C02MH-TL-E

BipolarTransistor30V,0.7A,LowVCE(sat)NPNSingleMCPH3

BipolarTransistor 30V,0.7A,LowVCE(sat)NPNSingleMCPH3 Features ?Largecurrentcapacity ?Lowcollector-to-emittersaturationvoltage(resistance)):RCE(sat)typ=330mΩ[IC=0.7A,IB=35mA] ?Ultrasmallpackagefacilitatesminiaturizationinendproducts ?SmallON-resistance(Ron) ?Ha

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

30C02MH-TL-E

Low-FrequencyGeneral-PurposeAmplifierApplications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

30C02MH-TL-H

Low-FrequencyGeneral-PurposeAmplifierApplications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

30C02MH-TL-H

BipolarTransistor30V,0.7A,LowVCE(sat)NPNSingleMCPH3

BipolarTransistor 30V,0.7A,LowVCE(sat)NPNSingleMCPH3 Features ?Largecurrentcapacity ?Lowcollector-to-emittersaturationvoltage(resistance)):RCE(sat)typ=330mΩ[IC=0.7A,IB=35mA] ?Ultrasmallpackagefacilitatesminiaturizationinendproducts ?SmallON-resistance(Ron) ?Ha

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

30C02SS

Low-FrequencyGeneral-PurposeAmplifierApplications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

EMF30C02G

N&P??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: N‐CHP‐CH BVDSS20V‐20V RDSON(MAX.)30.5mΩ100mΩ ID6.5A‐4.2A ??????? Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMF30C02K

N&P??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: N‐CHP‐CH BVDSS20V‐20V RDSON(MAX.)30.5mΩ100mΩ ID5A‐3.2A ??????? Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

UF30C02C

GlassPassivatedUltraFastRecoveryRectifier

YENYOYenyo Technology Co., Ltd.

元耀科技元耀科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    30C02S-TL-E

  • 制造商：

    SANYO Semiconductor Co Ltd

  • 功能描述：

    Cut Tape

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onsemi(安森美)
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9908
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1983
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SANYO
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SOT423-3
2600
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更多30C02S-TL-E供應(yīng)商 更新時(shí)間2024-12-29 16:12:00

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