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30N06V-Q中文資料友順數(shù)據(jù)手冊(cè)PDF規(guī)格書

30N06V-Q
廠商型號(hào)

30N06V-Q

功能描述

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

文件大小

205.67 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 Unisonic Technologies
企業(yè)簡(jiǎn)稱

UTC友順

中文名稱

友順科技股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-19 22:59:00

30N06V-Q規(guī)格書詳情

DESCRIPTION

The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.

FEATURES

* RDS(ON) < 40m?@VGS = 10 V, ID=15A

* Fast switching capability

* Avalanche energy specified

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