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338-SERIES

Card Edge Connector | Green | 0.156 (3.96mm) Pitch | 0.200 (5.08mm) Row Spacing | 0.045 Posts | 0.473 (12.01mm) Insulator Height

Features .156(3.96mm)ContactSpacingx.200(5.08mm)RowSpacing Accepts.062(1.57mm)NominalThicknessP.C.Board LowProfileInsulatorBody,.473(12.01mm) ContactTermination.045(1.14mm)SquareWireWrap SingleorDualRowConfigurations LargeVarietyofMountingOptions Pre-assembl

EDACEDAC, All Rights Reserved.

亞得電子亞得電子（東莞）有限公司

AI338

a380KpixelsCCDareasensorforNTSC1/3inchvideocameras

A1PROS

A1 PROs co., Ltd.

ASW338

5-4000MHzMMICAmplifier

ASB

Advanced Semiconductor Business Inc.

ASW338

5~4000MHzMMICAmplifier

ASB

Advanced Semiconductor Business Inc.

BA338

MutedetectorIC

TheBA336,BA338andBA338LaremonolithicICsdesignedformutedetectionandtapeenddetection.Whenadurationofsilence(52dBmorless)exceedsthetimeconstantsetwithanexternalCRcircuit,asonggapisidentified,andafterthisaplungercontrolsignalisoutputduringapulsewhose

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BA338L

MutedetectorIC

TheBA336,BA338andBA338LaremonolithicICsdesignedformutedetectionandtapeenddetection.Whenadurationofsilence(52dBmorless)exceedsthetimeconstantsetwithanexternalCRcircuit,asonggapisidentified,andafterthisaplungercontrolsignalisoutputduringapulsewhose

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BC338

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES ?HighCurrent:IC=800mA. ?DCCurrentGain:hFE=100~630(VCE=1V,Ic=100mA). ?ForComplementarywithPNPtypeBC328.

KECKEC CORPORATION

KEC株式會(huì)社

BC338

SmallSignalTransistors(NPN)

FEATURES ?NPNSiliconEpitaxialPlanarTransistors forswitchingandamplifierapplications.Especially suitableforAF-driverstagesandlowpower outputstages. ?Thesetypesarealsoavailablesubdi videdintothreegroups-16,-25,and-40, accordingtotheirDCcurrent

GE

GE Industrial Company

BC338

SWITCHINGANDAMPLIFIERAPPLICATIONS

SwitchingandAmplifierApplications ?SuitableforAF-Driverstagesandlowpoweroutputstages ?ComplementtoBC327/BC328

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BC338

AmplifierTransistor

TheLM337isanadjustable3–terminalnegativevoltageregulatorcapableofsupplyinginexcessof1.5Aoveranoutputvoltagerangeof–1.2Vto–37V.Thisvoltageregulatorisexceptionallyeasytouseandrequiresonlytwoexternalresistorstosettheoutputvoltage.Further,itemploysi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

BC338

NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications???

NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications

SEMTECH

Semtech Corporation

BC338

NPNSiliconAFTransistors(HighcurrentgainHighcollectorcurrentLowcollector-emittersaturationvoltage)

●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC327,BC328(PNP)

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BC338

AmplifierTransistors

AmplifierTransistorsNPNSilicon Features ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BC338

SWITCHINGANDAMPLIFIERAPPLICATIONS

SWITCHINGANDAMPLIFIERAPPLICATIONS FEATURES *SuitableforAF-Driverstagesandlowpoweroutputstages *ComplementtoUTCBC327/328

UTCUnisonic Technologies

友順友順科技股份有限公司

BC338

Si-EpitaxialPlanarTransistors

GeneralPurposeSi-EpitaxialPlanarTransistors ?Powerdissipation625mW ?PlasticcaseTO-92(10D3) ?Weightapprox.0.18g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedinammopack

Diotec

Diotec Semiconductor

BC338

GeneralPurposeSi-EpitaxialPlanarTransistors

Diotec

Diotec Semiconductor

BC338

NPNPlastic-EncapsulateTransistors

FEATURES Powerdissipation PCM:0.625W（Tamb=25℃） Collectorcurrent ICM:0.8A Collector-basevoltage V(BR)CBO:BC33750V Operatingandstoragejunctiontemperaturerange TJ，Tstg:-55℃to+150℃

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BC338

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

DCCOM

Dc Components

BC338

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications Thesetypesaresubdividedintothreegroups-16, -25and-40,accordingtotheirDCcurrentgain.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

BC338

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.8A Collector-basevoltage VCBO:BC33750V BC33830V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

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GX
13+
15676
原裝分銷
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KODENSHI原裝
22+23+
DIP-3
25831
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EVERLIGHT/億光
2016+
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12288
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EVERLIGHT
23+24
DIP-3
39870
專業(yè)光電傳感器,開關(guān),發(fā)射管,發(fā)光二極等優(yōu)勢(shì)原裝現(xiàn)
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EVERLIGHT/億光
24+
DIP-3
880000
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ILLCAP
12+
DIP
92000
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ILLCAP
24+
DIP
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
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Illinois
1931+
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18
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18
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