33C408RTFI-30中文資料Maxwell數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION:

Maxwell Technologies’ 33C408 high-density 4 Megabit SRAM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell’s radiation-hardened RAD-PAK? packaging technology, the 33C408 realizes a high density, high performance, and low power consumption. Its fully static design eliminates the need for external clocks, while the CMOS circuitry reduces power consumption and provides higher reliability. The 33C408 is equipped with eight common input/output lines, chip select and output enable, allowing for greater system flexibility and eliminating bus contention. The 33C408 features the same advanced 512K x 8-bit SRAM, high-speed, and low-power demand as the commercial counterpart.

FEATURES:

? RAD-PAK? Technology radiation-hardened against natural space radiation

? 524,288 x 8 bit organization

? Total dose hardness:

- > 100 krad (Si), depending upon space mission

? Excellent Single Event Effect

- SELTH: > 68 MeV/mg/cm2

- SEUTH: = 3 MeV/mg/cm2

- SEU saturated cross section: 6E-9 cm2/bit

? Package:

- 32-Pin RAD-PAK? flat pack

- 32-Pin Non-RAD-PAK? flat pack

? Fast access time:

- 20, 25, 30 ns maximum times available

? Single 5V + 10 power supply

? Fully static operation

- No clock or refresh required

? Three state outputs

? TTL compatible inputs and outputs

? Low power:

- Standby: 60 mA (TTL); 10 mA (CMOS)

- Operation: 180 mA (20 ns); 170 mA (25 ns); 160 mA (30 ns)