DMN33D9LV-7

Marking：34B；Package：SOT563；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifi

DMN33D9LV-7A

Marking：34B；Package：SOT563；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifi

FBB3134K

Marking：34B；Package：DFN1006-3L-A；Plastic-Encapsulate MOSFETs

FEATURE LeadFreeProductisAcquired SurfaceMountPackage N-ChannelSwitchwithLowRDS(on) OperatedatLowLogicLevelGateDrive ESDProtectedGate APPLICATION Load/PowerSwitching InterfacingSwitching BatteryManagementforUltraSmall PortableElectronics LogicLevel

FDN342P

Marking：342P；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

ProductSummary Vps=-20V,Ip=-3A Rosion)

FNK3404

Marking：3404；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description TheFNK3404usesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thisdeviceissuitable foruseasaloadswitchandPWMapplications. GeneraFeatures VDS=30V,ID=5.8A RDS(ON)

G3401L

Marking：3401；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description TheG3401Lusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

IPB34CN10NG

Marking：34CN10N；Package：PG-TO263-3；N-channel, normal level

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

IRLML0030

Marking：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description TheIRLML0030usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=30VID=4.2A RDS(ON)

IRLML6346

Marking：3404B；Package：SOT-23；30V N-Channel Enhancement Mode MOSFET

Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheIRLML6346usesadvancedtrenchtechnology GeneralFeatures VDS=30VID=4.2A RDS(ON)

ISL23345TFRZ

Marking：345T；Package：QFN；Quad, 256 Tap, Low Voltage Digitally Controlled Potentiometer (XDCP?)

Features ?Fourpotentiometersperpackage ?256resistortaps ?10k??50k??or100k?totalresistance ?I2Cserialinterface -Noadditionalleveltranslatorforlowbussupply -Threeaddresspinsallowuptoeightdevicesperbus ?Maximumsupplycurrentwithoutserialbusactivity (stan