34AA02T-E/MS集成電路（IC）的存儲器規(guī)格書PDF中文資料

34AA02T-E/MS屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的34AA02T-E/MS存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The Microchip Technology Inc. 34XX02(1) is a 2-Kbit

Electrically Erasable PROM (EEPROM). This device

has two software write-protect features for the lower

half of the array, as well as an external pin that can be

used to write-protect the entire array. This allows the

system designer to protect none, half or all of the array,

depending on the application. The device is organized

as one block of 256 x 8-bit memory with a two-wire

serial interface. Its low-voltage design permits

operation down to 1.7V, with standby and active

currents of only 100 nA and 1 mA, respectively. The

34XX02 also has a page write capability for up to 16 bytes of data.

Features

? Permanent and Resettable Software Write-Protect

for Lower Half of the Array (00h-7Fh)

? Single Supply with Operation Down to 1.7V

? Low-Power CMOS Technology:

- Read current: 1 mA, typical

- Standby current: 100 nA, typical

? Two-Wire Serial Interface Bus, I2C Compatible

? Cascadable Up to Eight Devices

? Schmitt Trigger Inputs for Noise Suppression

? Output Slope Control to Eliminate Ground Bounce

? 100 kHz and 400 kHz Compatibility

? 1 MHz Clock for LC Versions

? Page Write Time: 5 ms, Maximum

? Self-Timed Erase/Write Cycle

? 16-Byte Page Write Buffer

? ESD Protection > 4,000V

? Software Write Protection for Lower 128 Bytes

? Hardware Write Protection for Entire Array

? More than 1 Million Erase/Write Cycles

? Data Retention > 200 Years

? RoHS Compliant

? Available for Extended Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Extended (E): -40°C to +125°C

? Automotive AEC-Q100 Qualified