零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Powerswitchcircuitofadaptorandcharger. | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-channelEnhancedVDMOSFETs | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
iscN-ChannelMOSFETTransistor ·FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS:1500V(Min) ·StaticDrain-SourceOn-ResistanceRDS(on): | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementMode | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode | IXYS IXYS Corporation | IXYS | ||
N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=178A@TC=25℃ ·DrainSourceVoltage -VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V ·AvalancheRated ·FastIntrinsicDiode APPLICATIONS ·EasytoMount ·SpaceSavings ·HighPowerDensity | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel1500V,2.5A,6Ωtyp.,PowerMESHPowerMOSFETsinTO-3PF,H2PAK-2,TO-220andTO247packages Features ?100avalanchetested ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications ?Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpower | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
2019+ |
TO-3PF |
500 |
進口原裝現(xiàn)貨假一賠萬力挺實單 |
詢價 | ||
MOTOROLA |
16+ |
CAN4 |
1000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
MOT |
2339+ |
CAN4 |
8985 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
MOTOROLA |
專業(yè)鐵帽 |
CAN4 |
1 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
MOTOROLA/摩托羅拉 |
專業(yè)鐵帽 |
CAN4 |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價 | ||
MOT |
24+ |
CAN4 |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
MOT |
2023+ |
CAN |
50000 |
全新原裝現(xiàn)貨 |
詢價 | ||
RCA |
24+ |
66 |
詢價 | ||||
RCA |
24+ |
68900 |
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126 |
詢價 | |||
MOTOROLA/摩托羅拉 |
23+ |
CAN4 |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價 |