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3N80K5

Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STD3N80K5

N-channel800V,2.8廓typ.,2.5AZener-protectedSuperMESH??5PowerMOSFETinDPAK,TO-220FP,TO-220andIPAKpackages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF3N80K5

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STF3N80K5

N-channel800V,2.8廓typ.,2.5AZener-protectedSuperMESH??5PowerMOSFETinDPAK,TO-220FP,TO-220andIPAKpackages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP3N80K5

N-channel800V,2.8廓typ.,2.5AZener-protectedSuperMESH??5PowerMOSFETinDPAK,TO-220FP,TO-220andIPAKpackages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU3N80K5

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STU3N80K5

N-channel800V,2.8廓typ.,2.5AZener-protectedSuperMESH??5PowerMOSFETinDPAK,TO-220FP,TO-220andIPAKpackages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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19+
TO-220
13500
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23+
TO-252
10000
公司只做原裝正品
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UTC/友順
TO-252
22+
6000
十年配單,只做原裝
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UTC
22+
TO220
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
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UTC
16+
TO252
2500
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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UTC
21+
TO-252
9866
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UTC
2225+
TO-220F1
14308
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23+
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8400
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UTC/友順
23+
TO-252
8400
專注配單,只做原裝進(jìn)口現(xiàn)貨
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UTC
24+
TO-252
12300
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更多3N80K5供應(yīng)商 更新時(shí)間2025-1-13 12:12:00