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43BDIE2V中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

43BDIE2V
廠商型號

43BDIE2V

功能描述

RAD-hardened precision bipolar single operational amplifier

文件大小

490.78 Kbytes

頁面數(shù)量

12

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體(ST)集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

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更新時間

2024-11-8 17:29:00

43BDIE2V規(guī)格書詳情

Description

The RHF43B is a precision bipolar operational amplifier available in a ceramic 8-pin flat package and in die form. ln addition to its low offset voltage, rail-to-rail feature and wide supply voltage, the RHF43B is designed for increased tolerance to radiation. Its intrinsic ELDRS-free rad-hard design allows this product to be used in space applications and in applications operating in harsh environments.

Features

■ High radiation immunity: 300 kRad TID at

high/low dose rate (ELDRS-free), tested

immunity of SEL /SEU at 125° C under

120 MeV/mg/cm2 LET ions, 14 V supply

■ Rail-to-rail output

■ 8 MHz gain bandwidth at 16 V

■ Low input offset voltage: 100 μV typ

■ Supply current: 2.2 mA typ

■ Operating from 3 to 16 V

■ Input bias current: 30 nA typ

■ ESD internal protection ≥ 2 kV

■ Latch-up immunity: 200 mA

■ QML-V RHA, ELDRS-free qualified under smd 5962-06237

Applications

■ Space probes and satellites

■ Defense systems

■ Scientific instrumentation

■ Nuclear systems

產(chǎn)品屬性

  • 型號:

    43BDIE2V

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    RAD-hardened precision bipolar single operational amplifier

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