47L64T-I/MNY集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

47L64T-I/MNY屬于集成電路（IC）的存儲(chǔ)器。由微芯科技股份有限公司制造生產(chǎn)的47L64T-I/MNY存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性?xún)煞N，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線(xiàn)、SPI、UFS、Xccela 總線(xiàn)和 1-線(xiàn)。

Serial SRAM Features

? Unlimited Reads/Unlimited Writes:

- Standard serial SRAM protocol

- Symmetrical timing for reads and writes

? SRAM Array:

- 8,192 x 8 bits

? High-Speed I2C Interface:

- Industry standard: 1 MHz, 400 kHz, and

100 kHz

- Zero cycle delay writes and reads to SRAM

array

- Schmitt Trigger inputs for noise suppression

? Low-Power CMOS Technology:

- Active current: 1 mA (maximum)

- Standby current: 200 μA (maximum)

Hidden EEPROM Backup Features

? Cell-Based Nonvolatile Backup:

- Mirrors SRAM array cell-for-cell

- Transfers all data to/from SRAM cells in

parallel (all cells at same time)

? Invisible-to-User Data Transfers:

- VCC level monitored inside device

- SRAM automatically saved on power disrupt

- SRAM automatically restored on VCC return

? 100,000 Backups Minimum

? 100 Years Retention (at 55°C)

Other Features of the 47L64

? Operating Voltage Range: 2.7V to 3.6V

? Temperature Ranges:

- Industrial (I): -40°C to +85°C

? ESD protection: >2,000V