48L512集成電路（IC）的存儲器規(guī)格書PDF中文資料

48L512屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的48L512存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Serial SRAM Features

? Unlimited Reads/Unlimited Writes:

- Standard serial SRAM protocol

- Symmetrical timing for reads and writes

? SRAM Array:

- 65,536 x 8 bit (48L512)

- 131,072 x 8 bit (48LM01)

? High-Speed SPI Interface:

- Up to 66 MHz

- Schmitt Trigger inputs for noise suppression

? Low-Power CMOS Technology:

- Active current: 5 mA (maximum)

- Standby current: 200 μA (at 85°C maximum)

- Hibernate current: 3 μA (at 85°C maximum)

Hidden EEPROM Backup Features

? Cell-Based Nonvolatile Backup:

- Mirrors SRAM array cell-for-cell

- Transfers all data to/from SRAM cells in

parallel (all cells at same time)

? Invisible-to-User Data Transfers:

- VCC level monitored inside device

- SRAM automatically saved on power disrupt

- SRAM automatically restored on VCC return

? 100,000 Backups Minimum (at 85°C)

? 100 Years Retention (at 55°C)

Other Features of the 48L512/48LM01

? Operating Voltage Range: 2.7V-3.6V

? Temperature Ranges:

- Industrial (I): -40°C to +85°C

? ESD Protection: >2,000V