48SD6404中文資料Maxwell數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION:

Maxwell Technologies’ Synchronous Dynamic Random Access Memory (SDRAM) is ideally suited for space applications requiring high performance computing and high density memory storage. As microprocessors increase in speed and demand for higher density memory escalates, SDRAM has proven to be the ultimate solution by providing bit-counts up to 256 Mega Bits and speeds up to 100 Megahertz. SDRAMs represent a significant advantage in memory technology over traditional DRAMs including the ability to burst data synchronously at high rates with automatic column-address generation, the ability to interleave between banks masking precharge time.

FEATURES:

? 256 Megabit ( 16-Meg X 4-Bit X 4-Banks)

? RAD-PAK? radiation-hardened against natural space radiation

? Total Dose Hardness:

>100 krad (Si), depending upon space mission

? Excellent Single Event Effects:

SELTH > 85 MeV/mg/cm2 @ 25°C

? JEDEC Standard 3.3V Power Supply

? Operating Current: 115 mA

? Clock Frequency: 100 MHz Operation

? Operating tremperature: -55 to +125 °C

? Auto Refresh

? Single pulsed RAS

? 2 Burst Sequence variations

Sequential (BL =1/2/4/8)

Interleave (BL = 1/2/4/8)

? Programmable CAS latency: 2/3

? Power Down and Clock Suspend Modes

? LVTTL Compatible Inputs and Outputs

? Package: 72-Pin RAD-PAK? Flat Package