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5082-2300中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

5082-2300
廠商型號(hào)

5082-2300

功能描述

Schottky Barrier Diodes for General Purpose Applications

文件大小

124.62 Kbytes

頁(yè)面數(shù)量

1 頁(yè)

生產(chǎn)廠商 New Jersey Semi-Conductor Products, Inc.
企業(yè)簡(jiǎn)稱(chēng)

NJSEMI新澤西半導(dǎo)體

中文名稱(chēng)

新澤西半導(dǎo)體產(chǎn)品股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-22 18:29:00

5082-2300規(guī)格書(shū)詳情

Description/Applications

The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.

Features

? Low Turn-On Voltage

As Low as 0.34 V at 1 mA

? Pico Second Switching Speed

? High Breakdown Voltage

Up to 70 V

? Matched Characteristics Available

產(chǎn)品屬性

  • 型號(hào):

    5082-2300

  • 制造商:

    NJSEMI

  • 制造商全稱(chēng):

    New Jersey Semi-Conductor Products, Inc.

  • 功能描述:

    Schottky Barrier Diodes for General Purpose Applications

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