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APT5540AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT5540BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT5540DN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT5540HN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BFCN-5540

BandpassFilter

MINI

Mini-Circuits

BFCN-5540+

BandpassFilter

MINI

Mini-Circuits

C5540

Teck90600V,12GC#1214StrBC,XLPEInsM4,PVCJkt,AIAArmor,BlkPVCJkt,CSAHLSUNRES-40C

ProductDescription Teck90600V,12+GConductor12+14AWG(7x20H)BareCopper,XLPEInsulationM4ColorCode,PVCInnerJacket,AluminumInterlockArmor,BlackPVC OuterJacket,CSAHLSUNRES-40C

BELDENBelden Inc.

百通電纜設(shè)計(jì)科技有限公司

CD5540B

ZENERDIODECHIPS

?1N5518BTHRU1N5546BAVAILABLEINJANHCANDJANKCPERMIL-PRF-19500/437 ?ZENERDIODECHIPS ?ALLJUNCTIONSCOMPLETELYPROTECTEDWITHSILICONDIOXIDE ?ELECTRICALLYEQUIVALENTTO1N5518BTHRU1N5546B ?0.5WATTCAPABILITYWITHPROPERHEATSINKING ?COMPATIBLEWITHALLWIREBONDING

CDI-DIODE

Compensated Deuices Incorporated

CD5540B

0.5WZenerDiode

Features SharpReverseCharacteristics LowReverseCurrentLevels HighReliabilityGoldBackMetal HighReliabilityTestedGrades.

SS

Silicon Supplies

CDLL5540

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

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