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IXFH58N20

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH58N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH58N20Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH58N20Q

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRatedHighdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -easiertodrive -fasterswitching ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Moldingepoxi

IXYS

IXYS Corporation

IXFM58N20

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM58N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=40mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR58N20Q

HiPerFETPowerMOSFETsISOPLUS247Q-Class

HiPerFET?PowerMOSFETsISOPLUS247?Q-Class(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface

IXYS

IXYS Corporation

IXFT58N20

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT58N20Q

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRatedHighdv/dt,LowQg Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -easiertodrive -fasterswitching ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Moldingepoxi

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
23+
TO-247
3000
全新原裝
 詢價
IXYS
22+
TO-3P
6500
鄭重承諾只做原裝進口貨
 詢價
TI/德州儀器
23+
8355
只做原裝現(xiàn)貨/實單可談/支持含稅拆樣
 詢價
PANASONIC/松下
23+
6540
只做原裝正品現(xiàn)貨或者訂貨假一賠十!
 詢價
SOLITRON
新
12
全新原裝 貨期兩周
 詢價
N/A
2023+
QFP
50000
原裝現(xiàn)貨
 詢價
LEGERITY
22+
QFP-64
41507
原裝正品現(xiàn)貨
 詢價
原裝LEGERIT
19+
QFP-64
20000
原裝現(xiàn)貨假一罰十
 詢價
原裝LEGERIT
24+
QFP-64
35200
一級代理/放心采購
 詢價
LEGERITY
23+
QFP-64
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價
更多58N20供應(yīng)商 更新時間2024-12-27 16:06:00

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