5962R1121202V9A中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

Features

? DLA SMD 5962-11212

? Output current up to 3.0A at TJ = +150°C

? Output accuracy ±1.5 over MIL temperature range

? Ultra low dropout:

- 65mV (typical) dropout at 1.0A

- 225mV (typical) dropout at 3.0A

? SET mitigation with no added filtering/diodes

? Input supply range: 2.2V to 6.0V

? Fast load transient response

? Shutdown current of 1μA (typical)

? Output adjustable using external resistors

? PSRR 66dB (typical) at 1kHz

? Enable and PGood feature

? Programmable soft-start/inrush current limiting

? Over-temperature shutdown and programmable OCP limits

? Stable with 47μF min tantalum capacitor

? Radiation environment

- High dose rate (50-300rad(Si)/s) . . . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)*

*Product capability established by initial characterization. The

“EH” version is acceptance tested on a wafer-by-wafer basis to

50krad(Si) at low dose rate.