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5962R2220101VXC中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

5962R2220101VXC
廠商型號(hào)

5962R2220101VXC

功能描述

TPS7H6003-SP Radiation-Hardness-Assured 200-V, 1.3-A, 2.5-A, Half Bridge GaN FET Gate Driver

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1.81073 Mbytes

頁(yè)面數(shù)量

37 頁(yè)

生產(chǎn)廠商 Texas Instruments
企業(yè)簡(jiǎn)稱(chēng)

TI1德州儀器

中文名稱(chēng)

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更新時(shí)間

2025-1-13 9:22:00

5962R2220101VXC規(guī)格書(shū)詳情

1 Features

? Radiation Performance:

– Radiation-hardness-assurance (RHA) up to

total ionizing dose (TID) of 100 krad(Si)

– Single-event transient (SET), single-event

burnout (SEB), and single-event gate rupture

(SEGR) immune to

linear energy transfer (LET) = 75 MeV-cm2/mg

– Single-event transient (SET) and single-event

functional interrupt (SEFI) characterized up to

LET = 75 MeV-cm2/mg

? 1.3-A peak source, 2.5-A peak sink current

? Two operational modes:

– Single PWM input with adjustable dead time

– Two independent inputs

? Selectable input interlock protection in

independent input mode

? Split outputs for adjustable turn-on and turn-off

times

? 30-ns typical propagation delay in independent

input mode

? 5.5-ns typical delay matching

2 Applications

? Space satellite power supplies

? Communications payload

? Command and data handling

? Optical imaging payload

? Satellite electrical power system

3 Description

The TPS7H6003-SP is a 200-V radiation-hardnessassured

(RHA) gallium nitride (GaN) field effect

transistor (FET) gate driver designed for high

frequency, high efficiency applications. The driver

features adjustable dead time capability, small 30-ns

propagation delay and 5.5-ns high-side and low-side

matching. This part also includes internal high-side

and low-side LDOs which ensure a drive voltage of 5

V regardless of supply voltage. The TPS7H6003-SP

has split-gate outputs, providing flexibility to adjust

the turn-on and turn-off strength of the outputs

independently.

The TPS7H6003-SP features two control input

modes: independent input mode (IIM) and PWM

mode. In IIM each of the outputs is controlled by a

dedicated input. In PWM mode, two complementary

outputs signals are generated from a single input and

the user can adjust the dead time for each edge.

The gate driver also offers user configurable input

interlock in independent input mode as anti-shoot

through protection. Input interlock disallows turn-on of

both outputs when both inputs are on simultaneously.

The user has the option to enable or disable

this protection in independent input mode, which

allows the driver to be used in a number of

different converter configurations. The driver can also

be utilized for both half-bridge and dual-low side

converter applications.

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