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ATS651LSHTN-T

Two-WireSelf-CalibratingDifferentialSpeedandDirectionSensorwithVibrationImmunity

FeaturesandBenefits ?Rotationaldirectiondetection ?Fullyoptimizeddigitaldifferentialgear-toothsensor ?Single-chipsensingICforhighreliability ?Smallmechanicalsize(8mmdiameter×5.5mmvertical,flat-to-flat) ?Internalcurrentregulatorfor2-wireoperation ?Automatic

ALLEGRO

Allegro MicroSystems

ATS651LSHTN-T

Two-WireSelf-CalibratingDifferentialSpeedandDirectionSensorwithVibrationImmunity

FeaturesandBenefits ?Rotationaldirectiondetection ?Fullyoptimizeddigitaldifferentialgear-toothsensor ?Single-chipsensingICforhighreliability ?Smallmechanicalsize(8mmdiameter×5.5mmvertical,flat-to-flat) ?Internalcurrentregulatorfor2-wireoperation ?Automatic

ALLEGRO

Allegro MicroSystems

BD651

NPNSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

POINN

Power Innovations Ltd

BD651

NPNSILICONPOWERDARLINGTONS

BournsBourns Electronic Solutions

伯恩斯

BD651

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD651

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) ?HighDCCurrentGain:hFE=750(Min)@IC=3A ?LowSaturationVoltage ?ComplementtoTypeBD652 APPLICATIONS ?DesignedforuseascomplementaryAFpush-pulloutputstageapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD651

SiliconNPNPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications

SAVANTIC

Savantic, Inc.

BD651

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

BD651

SILICONDARLINGTONPOWERTRANSISTORS

COMSET

Comset Semiconductor

BD651

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

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APEM
20+
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96
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24+
N/A
56000
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PANASONI
24+
QFP()
2500
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PANASONI..
24+
QFP(無鉛)
2000
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PANASONI
2023+
QFP
50000
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Panavise
2010+
N/A
66
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22+
NA
500000
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RENESAS(瑞薩)/IDT
24+
VFQFN8(2x2)
7350
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RENESAS(瑞薩)/IDT
2447
VFQFN-8(2x2)
315000
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RENESAS(瑞薩)/IDT
2021+
VFQFN-8(2x2)
499
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更多651NH供應(yīng)商 更新時(shí)間2021-9-14 10:50:00

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