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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
65R190	文件：450.41 Kbytes Page：6 Pages	20A竊?50V N-CHANNEL MOSFET	KIAKIA Semiconductor Technology 可易亞半導(dǎo)體廣東可易亞半導(dǎo)體科技有限公司	KIA
IIPP65R190CFD	文件：339.16 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IIPW65R190CFD	文件：335.92 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPA65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPA65R190CFD	文件：6.53687 Mbytes Page：20 Pages	MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPA65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPA65R190CFD	文件：261.04 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPB65R190CFD	文件：189.53 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPB65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R190CFD	文件：6.53687 Mbytes Page：20 Pages	MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R190CFDA	文件：2.19785 Mbytes Page：16 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R190CFD	文件：331.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPI65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R190CFD	文件：6.53687 Mbytes Page：20 Pages	MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R190CFD	文件：339.16 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPP65R190CFDA	文件：2.19785 Mbytes Page：16 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市國宇半導(dǎo)體科技有限公司	65R190C	INFINEON/英飛凌	23+	TO-220	10000	公司只做原裝正品	詢價
深圳市河鋒鑫科技有限公司	65R190C	INFINEON	22+	TO-220	6000	十年配單,只做原裝	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	65R190FA	FH/飛虹	23+	PFA	300000	原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳	詢價
深圳市躍創(chuàng)芯科技有限公司	65R190C	INFINEON	22+	TO-220	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價
深圳市創(chuàng)新跡電子有限公司	65R190C	INFINEON	22+	TO-220	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價
深圳市安富世紀(jì)電子有限公司	65R190C	INFINEON	23+	TO-220	8000	只做原裝現(xiàn)貨	詢價
天津市博通航睿技術(shù)有限公司	65R190C	INFINEON	23+	TO-220	7000		詢價
深圳和潤天下電子科技有限公司	65R190C	INFINEON/英飛凌	22+	TO-220	92226		詢價
深圳市宏捷佳電子科技有限公司	65R190C	INFINEON	24+	TO-TO-220	12300	獨立分銷商公司只做原裝誠心經(jīng)營免費試樣正品保證	詢價
深圳市華斯頓科技有限公司	65R380E6	INFINEON	22+23+	TO-220F-3	43195	絕對原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價

更多65R190供應(yīng)商更新時間2024-12-28 14:30:00

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