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FDD6670

N-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6670

30VN-ChannelMOSFET

Features ·RDS(ON)=8mW(VGS=10V) ·RDS(ON)=10mW(VGS=4.5V) ·Lowgatecharge ·FastSwitching ·Highperformancetrenchtechnologyforextremely lowRDS(ON) ·VDS(V)=-30V

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

FDD6670A

30VN-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6670A

N-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6670A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=66A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDD6670A

30VN-ChannelMOSFET

Features ·RDS(ON)=8mW(VGS=10V) ·RDS(ON)=10mW(VGS=4.5V) ·Lowgatecharge ·FastSwitching ·Highperformancetrenchtechnologyforextremely lowRDS(ON) ·VDS(V)=-30V

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

FDD6670A

N-channelAdvancedModePowerMOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD6670AL

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features ?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6670AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=84A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDD6670AL

N-channelAdvancedModePowerMOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

詳細參數(shù)

  • 型號:

    6670

  • 制造商:

    AVX Corporation

  • 功能描述:

    MISC CONNECTOR - Bulk

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更多6670供應(yīng)商 更新時間2025-4-23 14:10:00