6ED2231S12TXUMA1中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

Features

? Infineon Thin-Film-SOI technology

? Fully operational to +1200 V

? Optimized for IGBT (insulated gate bipolar transistor)

/ SiC(Silicon carbide) MOSFET

? Integrated Ultra‐fast Bootstrap Diode

? Floating channel designed for bootstrap operation

? Output source/sink current capability +0.35 A/‐0.65 A

? Tolerant to negative transient voltage up to -100 V

(Pulse width is up 700 ns) given by SOI-technology

? Undervoltage lockout for both channels

? 3.3 V, 5 V, and 15 V input logic compatible

? Over current protection with ±5 ITRIP threshold

? Fault reporting, automatic Fault clear and

Enable function on the same pin (RFE)

? Matched propagation delay for all channels

? Integrated 460 ns deadtime protection

? Shoot-through (cross-conduction) protection

? VCC support up to 25 V

? 2 kV HBM ESD