6N135S中文資料CTMICRO數(shù)據(jù)手冊PDF規(guī)格書

Description

The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor.

Features

? High speed 1MBit/s

? High isolation voltage between input and output

(Viso=5000 Vrms )

? Guaranteed CTR performance from 0°C to 70°C

? Wide operating temperature range of -55°C to

100°C

? Regulatory Approvals

■ UL - UL1577 (E364000)

■ VDE - EN60747-5-5(VDE0884-5)

■ CQC – GB4943.1, GB8898

■ IEC60065, IEC60950

Applications

? Line receivers

? Telecommunication equipment

? High speed logic ground isolation

? Feedback loop in switch-mode power supplies

? Home appliances