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6N136S(TB)-V中文資料臺灣億光數(shù)據(jù)手冊PDF規(guī)格書

6N136S(TB)-V
廠商型號

6N136S(TB)-V

功能描述

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

文件大小

981.69 Kbytes

頁面數(shù)量

14

生產(chǎn)廠商 Everlight Electronics Co., Ltd
企業(yè)簡稱

Everlight臺灣億光

中文名稱

億光電子工業(yè)股份有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-1-19 23:00:00

6N136S(TB)-V規(guī)格書詳情

Description

The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor.

The devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD option.

Features

? High speed 1Mbit/s

? High isolation voltage between input and output (Viso=5000 Vrms )

? Guaranteed performance from 0°C to 70°C

? Wide operating temperature range of -55°C to 100°C

? Pb free and RoHS compliant

? UL approved (No. 214129)

? VDE approved (No. 132249)

? SEMKO approved

? NEMKO approved

? DEMKO approved

? FIMKO approved

? CSA approved (No. 2037145)

Applications

? Line receivers

? Telecommunication equipments

? Power transistor isolation in motor drives

? Replacement for low speed phototransistor photo couplers

? Feedback loop in switch-mode power supplies

? Home appliances

? High speed logic ground isolation

產(chǎn)品屬性

  • 型號:

    6N136S(TB)-V

  • 功能描述:

    高速光耦合器 1Mb High Speed DC Input

  • RoHS:

  • 制造商:

    Avago Technologies

  • 最大正向二極管電壓:

    1.75 V

  • 最大反向二極管電壓:

    5 V

  • 最大功率耗散:

    40 mW

  • 最大工作溫度:

    +125 C

  • 最小工作溫度:

    - 40 C

  • 封裝/箱體:

    SOIC-5

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
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