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STB6NC90Z

N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D?PAK/I?PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP6NC90Z

N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D?PAK/I?PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP6NC90ZFP

N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D?PAK/I?PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW6NC90

N-CHANNEL900V-2.1ohm-5.2ATO-247Zener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateand source.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW6NC90Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW6NC90Z

N-CHANNEL900V-2.1ohm-5.2ATO-247Zener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateand source.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
23+
TO-247
3000
全新原裝
 詢價
TOSHIBA
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
 詢價
TOSHIBA
24+
MODULE
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
 詢價
Altech Corp.
2022+
9
全新原裝 貨期兩周
 詢價
24+
N/A
62000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
原廠
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
 詢價
BUSSMANN
24+
模塊
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
BUSSMANN巴斯曼熔斷器
23+
Fuse
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
BUSSMANN巴斯曼熔斷器
2022+
6A/500V
1750
長期供應(yīng),價格優(yōu)勢,全新原裝,支持實單,
 詢價
BUSSMANN/巴斯曼
23+
標(biāo)準(zhǔn)封裝
5000
原廠授權(quán)一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保
 詢價
更多6NC90供應(yīng)商 更新時間2025-3-14 16:00:00

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