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70P246L55BYGA

VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70P246L55AAA

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70P246L55AAI

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70P246L55AGA

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70P246L55AGI

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70P246L55BYAA

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70P246L55BYAI

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70P246L55BYGI

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT, Integrated Device Technol
21+
48-TFBGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
 詢(xún)價(jià)
IDT, Integrated Device Technol
21+
100-CABGA(6x6)
56200
一級(jí)代理/放心采購(gòu)
 詢(xún)價(jià)
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢(xún)價(jià)
RENESAS(瑞薩)/IDT
2117+
CABGA-100(6x6)
315000
90個(gè)/托盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)
 詢(xún)價(jià)
IDT
20+
BGA-100
90
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢(xún)價(jià)
RENESAS(瑞薩電子)
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂(yōu)
 詢(xún)價(jià)
IDT
22+
NA
1186
加我QQ或微信咨詢(xún)更多詳細(xì)信息,
 詢(xún)價(jià)
Integrated Device Technology
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
 詢(xún)價(jià)
RENESAS(瑞薩)/IDT
23+
CABGA100(6x6)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢(xún)價(jià)
24+
N/A
56000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢(xún)價(jià)
更多70P246L55BYGA供應(yīng)商 更新時(shí)間2024-11-18 13:02:00

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