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70T3339S133BCI

HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenab

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T3339S133BCI

Package:256-LBGA;包裝:托盤 類別:集成電路(IC) 存儲器 描述:IC SRAM 9MBIT PARALLEL 256CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

70T3339S133BCI8

HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenab

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T3339S133BCI8

Package:256-LBGA;包裝:托盤 類別:集成電路(IC) 存儲器 描述:IC SRAM 9MBIT PARALLEL 256CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

70T3339S133BF

HIGH-SPEED2.5V512/256/128KX18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenab

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T3339S133BFG

HIGH-SPEED2.5VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T3339S133BFG

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T3339S133BFGI

HIGH-SPEED2.5V512/256/128KX18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenab

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T3339S133BFGI

HIGH-SPEED2.5VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T3339S133BFGI

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號:

    70T3339S133BCI

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術:

    SRAM - 雙端口,同步

  • 存儲容量:

    9Mb(512K x 18)

  • 存儲器接口:

    并聯(lián)

  • 電壓 - 供電:

    2.4V ~ 2.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    256-LBGA

  • 供應商器件封裝:

    256-CABGA(17x17)

  • 描述:

    IC SRAM 9MBIT PARALLEL 256CABGA

供應商型號品牌批號封裝庫存備注價格
IDT
24+
SMD
324554
原裝進口現(xiàn)貨
詢價
IDT, Integrated Device Technol
21+
208-LFBGA
5280
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營
詢價
IDT, Integrated Device Technol
24+
256-CABGA(17x17)
56200
一級代理/放心采購
詢價
IDT
1931+
N/A
1186
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
IDT
20+
BGA-256
12
就找我吧!--邀您體驗愉快問購元件!
詢價
Renesas
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細信息,
詢價
Integrated Device Technology
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
Renesas Electronics America In
24+
256-LBGA
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
更多70T3339S133BCI供應商 更新時間2025-1-31 13:30:00