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70T3539MS133BCGI

HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeatf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T3539MS133BCGI

HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

70T3539MS133BCGI

HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

70T3539MS133BCGI

包裝：托盤 封裝/外殼：256-LBGA 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 18MBIT PARALLEL 256CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

70T3539MS133BCGI8

HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

70T3539MS133BCGI8

HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

70T3539MS133BC

HIGH-SPEED2.5V512Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeatf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T3539MS133BCG

HIGH-SPEED2.5V512Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeatf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T3539MS133BCG

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T3539MS133BCG

HIGH-SPEED2.5V512Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T3539MS133BCI

HIGH-SPEED2.5V512Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeatf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT70T3539MS133BC

HIGH-SPEED2.5V512Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDT

Integrated Device Technology, Inc.

IDT70T3539MS133BCI

HIGH-SPEED2.5V512Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    70T3539MS133BCGI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲(chǔ)器

  • 包裝：

    托盤

  • 存儲(chǔ)器類型：

    易失

  • 存儲(chǔ)器格式：

    SRAM

  • 技術(shù)：

    SRAM - 雙端口，同步

  • 存儲(chǔ)容量：

    18Mb（512K x 36）

  • 存儲(chǔ)器接口：

    并聯(lián)

  • 電壓 - 供電：

    2.4V ~ 2.6V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    256-LBGA

  • 供應(yīng)商器件封裝：

    256-CABGA（17x17）

  • 描述：

    IC SRAM 18MBIT PARALLEL 256CABGA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT, Integrated Device Technol
21+
165-LBGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
IDT
22+
BGA
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
IDT, Integrated Device Technol
24+
256-CABGA(17x17)
56200
一級(jí)代理/放心采購
 詢價(jià)
RENESAS(瑞薩)/IDT
1921+
CABGA-256(17x17)
3575
向鴻倉庫現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝!
 詢價(jià)
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
RENESAS(瑞薩)/IDT
2117+
CABGA-256(17x17)
315000
6個(gè)/托盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢價(jià)
IDT
20+
BGA-256
12
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價(jià)
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
IDT
23+
BGA
5000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋齑?詳
 詢價(jià)
更多70T3539MS133BCGI供應(yīng)商 更新時(shí)間2025-1-10 8:39:00

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