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70T631S12BC8中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書

70T631S12BC8
廠商型號(hào)

70T631S12BC8

功能描述

HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

文件大小

513.809 Kbytes

頁面數(shù)量

28

生產(chǎn)廠商 Renesas Technology Corp
企業(yè)簡稱

RENESAS瑞薩

中文名稱

瑞薩科技有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-22 14:08:00

70T631S12BC8規(guī)格書詳情

Features

◆ True Dual-Port memory cells which allow simultaneous

access of the same memory location

◆ High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 10/12ns (max.)

◆ RapidWrite Mode simplifies high-speed consecutive write

cycles

◆ Dual chip enables allow for depth expansion without

external logic

◆ IDT70T633/1 easily expands data bus width to 36 bits or

more using the Master/Slave select when cascading more

than one device

◆ M/S = VIH for BUSY output flag on Master,

M/S = VIL for BUSY input on Slave

◆ Busy and Interrupt Flags

On-chip port arbitration logic

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RENESAS(瑞薩)/IDT
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3575
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IDT, Integrated Device Technol
21+
165-LBGA
5280
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58000
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RENESAS(瑞薩)/IDT
2117+
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315000
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Renesas
21+
25000
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IDT
1931+
N/A
1186
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IDT
22+
NA
1186
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IDT, Integrated Device Technol
24+
256-CABGA(17x17)
56200
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Renesas Electronics Corporatio
23+/24+
256-LBGA
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
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RENESAS(瑞薩)/IDT
2021+
CABGA-256(17x17)
499
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