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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
70T633S10BCG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUS DUAL-PORT STATIC RAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BCG8	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCG8	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUS DUAL-PORT STATIC RAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUS DUAL-PORT STATIC RAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI8	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI8	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUS DUAL-PORT STATIC RAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：100 bytes Page：1 Pages	包裝：托盤(pán) 封裝/外殼：256-LBGA 類(lèi)別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 9MBIT PARALLEL 256CABGA	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
70T633S10BCI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BF	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BFG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFG	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BFG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFGI	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFGI	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFGI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BFI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
IDT70T633S10BC	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市斌騰達(dá)科技有限公司	70T633S10BCGI	IDT, Integrated Device Technol	21+	208-LFBGA	5280	進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)	詢(xún)價(jià)
瀚佳科技(深圳)有限公司	70T633S10BCGI	IDT, Integrated Device Technol	24+	256-CABGA(17x17)	56200	一級(jí)代理/放心采購(gòu)	詢(xún)價(jià)
深圳市艾宇欣科技有限公司	70T633S10BCGI	IDT	1931+	N/A	1186	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物	詢(xún)價(jià)
艾睿國(guó)際（香港）有限公司	70T633S10BCGI	RENESAS(瑞薩)/IDT	2117+	CABGA-256(17x17)	315000	6個(gè)/托盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期	詢(xún)價(jià)
深圳市科雨電子有限公司	70T633S10BCGI	IDT	20+	BGA-256	12	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢(xún)價(jià)
深圳市冠億通科技有限公司	70T633S10BCGI	Renesas	21+		25000	原廠(chǎng)原包深圳現(xiàn)貨主打品牌假一賠百可開(kāi)票!	詢(xún)價(jià)
訊運(yùn)(深圳/上海)電子有限公司	70T633S10BCGI	RENESAS(瑞薩)/IDT	2021+	CABGA-256(17x17)	499		詢(xún)價(jià)
萬(wàn)三科技(深圳)有限公司	70T633S10BCGI	RENESAS(瑞薩電子)	22+	NA	500000	萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂(yōu)	詢(xún)價(jià)
深圳市易訊博科技有限公司	70T633S10BCGI	IDT	22+	NA	1186	加我QQ或微信咨詢(xún)更多詳細(xì)信息,	詢(xún)價(jià)
深圳市鵬順微電子科技有限公司	70T633S10BCGI	Integrated Device Technology	2022+	原廠(chǎng)原包裝	8600	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷(xiāo)	詢(xún)價(jià)

更多70T633S10BCG供應(yīng)商更新時(shí)間2025-1-1 13:02:00

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