Features

◆ True Dual-Port memory cells which allow simultaneous

access of the same memory location

◆ High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 12ns (max.)

◆ RapidWrite Mode simplifies high-speed consecutive write

cycles

◆ Dual chip enables allow for depth expansion without

external logic

◆ IDT70T653M easily expands data bus width to 72 bits or

more using the Busy Input when cascading more than one

device

◆ Busy input for port contention management

◆ Interrupt Flags

◆ Full on-chip hardware support of semaphore signaling

between ports

◆ Fully asynchronous operation from either port

◆ Separate byte controls for multiplexed bus and bus

matching compatibility

◆ Sleep Mode Inputs on both ports

◆ Single 2.5V (±100mV) power supply for core

◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

◆ Includes JTAG functionality

◆ Available in a 256-ball Ball Grid Array

◆ Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆ Green parts available, see ordering information

70T653MS10BC屬于集成電路（IC） > 存儲器。瑞薩科技有限公司制造生產(chǎn)的70T653MS10BC存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。