Features

◆ True Dual-Ported memory cells which allow simultaneous

access of the same memory location

◆ High-speed access

– Commercial: 15ns (max.)

– Industrial: 20ns (max.)

◆ Low-power operation

– IDT70V09L

Active: 440mW (typ.)

Standby: 660μW (typ.)

◆ Dual chip enables allow for depth expansion without

external logic

◆ IDT70V09 easily expands data bus width to 16 bits or

more using the Master/Slave select when cascading more

than one device

◆ M/S = VIH for BUSY output flag on Master,

M/S = VIL for BUSY input on Slave

◆ Busy and Interrupt Flags

◆ On-chip port arbitration logic

◆ Full on-chip hardware support of semaphore signaling

between ports

◆ Fully asynchronous operation from either port

◆ LVTTL-compatible, single 3.3V (±0.3V) power supply

◆ Available in a 100-pin TQFP

◆ Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆ Green parts available, see ordering information

70V09L20PFGI屬于集成電路（IC） > 存儲器。瑞薩科技有限公司制造生產(chǎn)的70V09L20PFGI存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。