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70V28

HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:15/20ns(max.) –Industrial:20ns(max.) ◆Low-poweroperation –IDT70V28L Active:440mW(typ.) Standby:660μW(typ.) ◆Dualchipenablesallowfordepth

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V28L

HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:15/20ns(max.) –Industrial:20ns(max.) ◆Low-poweroperation –IDT70V28L Active:440mW(typ.) Standby:660μW(typ.) ◆Dualchipenablesallowfordepth

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V28L15PFG

HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:15/20ns(max.) –Industrial:20ns(max.) ◆Low-poweroperation –IDT70V28L Active:440mW(typ.) Standby:660μW(typ.) ◆Dualchipenablesallowfordepth

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V28L15PFG8

HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:15/20ns(max.) –Industrial:20ns(max.) ◆Low-poweroperation –IDT70V28L Active:440mW(typ.) Standby:660μW(typ.) ◆Dualchipenablesallowfordepth

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V28L20PFG

HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:15/20ns(max.) –Industrial:20ns(max.) ◆Low-poweroperation –IDT70V28L Active:440mW(typ.) Standby:660μW(typ.) ◆Dualchipenablesallowfordepth

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V28L20PFG8

HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:15/20ns(max.) –Industrial:20ns(max.) ◆Low-poweroperation –IDT70V28L Active:440mW(typ.) Standby:660μW(typ.) ◆Dualchipenablesallowfordepth

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V28L20PFGI

HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:15/20ns(max.) –Industrial:20ns(max.) ◆Low-poweroperation –IDT70V28L Active:440mW(typ.) Standby:660μW(typ.) ◆Dualchipenablesallowfordepth

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V28L20PFGI8

HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:15/20ns(max.) –Industrial:20ns(max.) ◆Low-poweroperation –IDT70V28L Active:440mW(typ.) Standby:660μW(typ.) ◆Dualchipenablesallowfordepth

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V28L15PFG

HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

70V28L15PFG

HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào)：

    70V28

  • 功能描述：

    靜態(tài)隨機(jī)存取存儲(chǔ)器 32Kx16 3.3V DUAL- PORT RAM

  • RoHS：

    否

  • 制造商：

    Cypress Semiconductor

  • 存儲(chǔ)容量：

    16 Mbit

  • 組織：

    1 M x 16

  • 訪問時(shí)間：

    55 ns

  • 電源電壓-最大：

    3.6 V

  • 電源電壓-最小：

    2.2 V

  • 最大工作電流：

    22 uA

  • 最大工作溫度：

    + 85 C

  • 最小工作溫度：

    - 40 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    TSOP-48

  • 封裝：

    Tray

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT/RENESAS
22+
PNG100
24500
瑞薩全系列在售
 詢價(jià)
IDT
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IDT
1815+
TQFP100
6528
只做原裝正品現(xiàn)貨!或訂貨,假一賠十!
 詢價(jià)
IDT
24+
SMD
42
“芯達(dá)集團(tuán)”專營軍工百分之百原裝進(jìn)口
 詢價(jià)
IDT
專業(yè)軍工
NA
1000
只做原裝正品軍工級(jí)部分訂貨
 詢價(jià)
IDT
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
IDT
2018+
NA
6000
全新原裝正品現(xiàn)貨,假一賠佰
 詢價(jià)
IDT, Integrated Device Technol
24+
100-TQFP(14x14)
56200
一級(jí)代理/放心采購
 詢價(jià)
RENESAS(瑞薩)/IDT
1921+
TQFP-100(14x14)
3575
向鴻倉庫現(xiàn)貨,優(yōu)勢絕對(duì)的原裝!
 詢價(jià)
IDT
1931+
N/A
1186
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更多70V28供應(yīng)商 更新時(shí)間2025-2-6 9:00:00

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