Features

◆ True Dual-Port memory cells which allow simultaneous

access of the same memory location

◆ High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 12ns (max.)

◆ Dual chip enables allow for depth expansion without

external logic

◆ IDT70V631 easily expands data bus width to 36 bits or

more using the Master/Slave select when cascading more

than one device

◆ M/S = VIH for BUSY output flag on Master,

M/S = VIL for BUSY input on Slave

◆ Busy and Interrupt Flags

◆ On-chip port arbitration logic

◆ Full on-chip hardware support of semaphore signaling

between ports

◆ Fully asynchronous operation from either port

◆ Separate byte controls for multiplexed bus and bus

matching compatibility

◆ Supports JTAG features compliant to IEEE 1149.1

– Due to limited pin count, JTAG is not supported on the

128-pin TQFP package.

◆ LVTTL-compatible, single 3.3V (±150mV) power supply for

core

◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

◆ Available in a 128-pin Thin Quad Flatpack, 208-ball fine

pitch Ball Grid Array, and 256-ball Ball Grid Array

◆ Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆ Green parts available, see ordering information

70V631S10BC屬于集成電路（IC） > 存儲(chǔ)器。瑞薩科技有限公司制造生產(chǎn)的70V631S10BC存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。