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70V658S10BFG

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V658S10BFG

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

70V658S10BFG

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

70V658S10BFG

包裝:卷帶(TR) 封裝/外殼:208-LFBGA 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 2MBIT PARALLEL 208FPBGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

70V658S10BFG8

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V658S10BFG8

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

70V658S10BFGI

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

70V658S10BFGI8

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

70V658S10BFG8

包裝:卷帶(TR) 封裝/外殼:208-LFBGA 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 2MBIT PARALLEL 208FPBGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

70V658S10DRG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V658S10DRG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V658S10DRG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V658S10DRGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

IDT70V658S10BC

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

IDT70V658S10BC

HIGH-SPEED3.3V64KX36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

IDT70V658S10BCI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

IDT70V658S10BCI

HIGH-SPEED3.3V64KX36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

IDT70V658S10BF

HIGH-SPEED3.3V64KX36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

IDT70V658S10BF

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

IDT70V658S10BFI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    70V658S10BFG

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    卷帶(TR)

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    SRAM

  • 技術(shù):

    SRAM - 雙端口,異步

  • 存儲(chǔ)容量:

    2Mb(64K x 36)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫周期時(shí)間 - 字,頁:

    10ns

  • 電壓 - 供電:

    3.15V ~ 3.45V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    208-LFBGA

  • 供應(yīng)商器件封裝:

    208-CABGA(15x15)

  • 描述:

    IC SRAM 2MBIT PARALLEL 208FPBGA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT, Integrated Device Technol
21+
119-BGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營(yíng)
詢價(jià)
IDT, Integrated Device Technol
24+
208-FPBGA(15x15)
56200
一級(jí)代理/放心采購
詢價(jià)
RENESAS(瑞薩)/IDT
1921+
FPBGA-208(15x15)
3575
向鴻倉庫現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝!
詢價(jià)
IDT
1931+
N/A
1186
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
詢價(jià)
RENESAS(瑞薩)/IDT
2117+
FPBGA-208(15x15)
315000
7個(gè)/托盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
詢價(jià)
IDT
20+
BGA-208
14
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
RENESAS(瑞薩)/IDT
2021+
FPBGA-208(15x15)
499
詢價(jià)
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價(jià)
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
Integrated Device Technology
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
詢價(jià)
更多70V658S10BFG供應(yīng)商 更新時(shí)間2025-1-4 8:01:00