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71256L20YG

包裝:卷帶(TR) 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲器 描述:IC SRAM 256KBIT PARALLEL 28SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71256L20YGI8

CMOS Static RAM 256K (32K x 8-Bit)

IDT

Integrated Device Technology, Inc.

71256L20YGI

包裝:卷帶(TR) 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲器 描述:IC SRAM 256KBIT PARALLEL 28SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71256L20YGI8

包裝:卷帶(TR) 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲器 描述:IC SRAM 256KBIT PARALLEL 28SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71256L20D

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L20DB

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L20L

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L20LB

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L20P

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L20PB

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L20TD

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L20TDB

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L20Y

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L20YB

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號:

    71256L20YG

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    卷帶(TR)

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術(shù):

    SRAM - 異步

  • 存儲容量:

    256Kb(32K x 8)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    20ns

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    28-BSOJ(0.300",7.62mm 寬)

  • 供應(yīng)商器件封裝:

    28-SOJ

  • 描述:

    IC SRAM 256KBIT PARALLEL 28SOJ

供應(yīng)商型號品牌批號封裝庫存備注價格
Integrated Device Technology (
2022+
1
全新原裝 貨期兩周
詢價
IDT, Integrated Device Technol
24+
28-SOJ
56200
一級代理/放心采購
詢價
IDT
1931+
N/A
2468
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物
詢價
RENESAS(瑞薩)/IDT
2117+
SOJ-28
315000
27個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
詢價
IDT
20+
SOP-28
3854
就找我吧!--邀您體驗愉快問購元件!
詢價
Renesas Electronics America In
21+
NA
11200
正品專賣,進(jìn)口原裝深圳現(xiàn)貨
詢價
RENESAS(瑞薩)/IDT
2021+
SOJ-28
499
詢價
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價
IDT
22+
NA
2468
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
RENESAS(瑞薩)/IDT
23+
SOJ28
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!
詢價
更多71256L20YG供應(yīng)商 更新時間2025-1-11 9:50:00