大陆极品少妇内射aaaaa,国产AV一区最新精品

首頁(yè) >71V65703S80BG>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
71V65703S80BG	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65703S80BG	文件：100 bytes Page：1 Pages	Package：119-BGA；包裝：托盤(pán) 類(lèi)別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 9MBIT PARALLEL 119PBGA	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V65703S80BG8	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65703S80BGG	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65703S80BGG8	文件：311.56 Kbytes Page：27 Pages	256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65703S80BGG	文件：100 bytes Page：1 Pages	Package：119-BGA；包裝：卷帶（TR）類(lèi)別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 9MBIT PARALLEL 119PBGA	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V65703S80BGG8	文件：100 bytes Page：1 Pages	Package：119-BGA；包裝：卷帶（TR）類(lèi)別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 9MBIT PARALLEL 119PBGA	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V65703S80BQ	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65703S80BQG	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65703S80BQGI	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65703S80BQI	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65703S80PFG	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V65703S80PFGI	文件：311.56 Kbytes Page：27 Pages	256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
IDT71V65703S80BG	文件：504.78 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65703S80BGI	文件：504.78 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65703S80BQ	文件：504.78 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65703S80BQI	文件：504.78 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65703S80PF	文件：504.78 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT
IDT71V65703S80PFI	文件：504.78 Kbytes Page：26 Pages	256Kx36,512Kx183.3VSynchronousZBTSRAMs	IDT Integrated Device Technology, Inc.	IDT

產(chǎn)品屬性

產(chǎn)品編號(hào)：
71V65703S80BG
制造商：
Renesas Electronics America Inc
類(lèi)別：
集成電路（IC） > 存儲(chǔ)器
包裝：
托盤(pán)
存儲(chǔ)器類(lèi)型：
易失
存儲(chǔ)器格式：
SRAM
技術(shù)：
SRAM - 同步，SDR（ZBT）
存儲(chǔ)容量：
9Mb（256K x 36）
存儲(chǔ)器接口：
并聯(lián)
電壓 - 供電：
3.135V ~ 3.465V
工作溫度：
0°C ~ 70°C（TA）
安裝類(lèi)型：
表面貼裝型
封裝/外殼：
119-BGA
供應(yīng)商器件封裝：
119-PBGA（14x22）
描述：
IC SRAM 9MBIT PARALLEL 119PBGA

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市斌騰達(dá)科技有限公司	71V65703S80BG	IDT, Integrated Device Technol	21+	64-LBGA	5280	進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)	詢(xún)價(jià)
瀚佳科技(深圳)有限公司	71V65703S80BG	IDT, Integrated Device Technol	24+	119-PBGA(14x22)	56200	一級(jí)代理/放心采購(gòu)	詢(xún)價(jià)
深圳市艾宇欣科技有限公司	71V65703S80BG	IDT	1931+	N/A	1186	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物	詢(xún)價(jià)
艾睿國(guó)際（香港）有限公司	71V65703S80BG	RENESAS(瑞薩)/IDT	2117+	PBGA-119(14x22)	315000	84個(gè)/托盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)	詢(xún)價(jià)
深圳市科雨電子有限公司	71V65703S80BG	IDT	20+	BGA-119	84	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢(xún)價(jià)
深圳市博正芯科技有限公司	71V65703S80BG	IDT, Integrated Device Technol	21+	NA	11200	正品專(zhuān)賣(mài),進(jìn)口原裝深圳現(xiàn)貨	詢(xún)價(jià)
訊運(yùn)(深圳/上海)電子有限公司	71V65703S80BG	RENESAS(瑞薩)/IDT	2021+	PBGA-119(14x22)	499		詢(xún)價(jià)
萬(wàn)三科技(深圳)有限公司	71V65703S80BG	RENESAS(瑞薩電子)	22+	NA	500000	萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂	詢(xún)價(jià)
深圳市易訊博科技有限公司	71V65703S80BG	IDT	22+	NA	1186	加我QQ或微信咨詢(xún)更多詳細(xì)信息,	詢(xún)價(jià)
深圳市智創(chuàng)誠(chéng)芯電子科技有限公司	71V65703S80BG		22+	BGA	25000	原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十	詢(xún)價(jià)

更多71V65703S80BG供應(yīng)商更新時(shí)間2025-1-18 13:02:00

客戶服務(wù) 網(wǎng)站合作

Tel：+86-755-8246-9263
Email：114ic＠114ic.com
投訴建議：web＠114ic.com

Copyright ? 2003-2025 114ic.com All Rights Reserved 粵ICP備05011613號(hào) 粵公網(wǎng)安備 44030402000933號(hào)