71V65803S150BQI集成電路（IC）的存儲器規(guī)格書PDF中文資料

Features

◆ 256K x 36, 512K x 18 memory configurations

◆ Supports high performance system speed - 150MHz

(3.8ns Clock-to-Data Access)

◆ ZBTTM Feature - No dead cycles between write and read cycles

◆ Internally synchronized output buffer enable eliminates the

need to control OE

◆ Single R/W (READ/WRITE) control pin

◆ Positive clock-edge triggered address, data, and control signal

registers for fully pipelined applications

◆ 4-word burst capability (interleaved or linear)

◆ Individual byte write (BW1 - BW4) control (May tie active)

◆ Three chip enables for simple depth expansion

◆ 3.3V power supply (±5)

◆ 3.3V I/O Supply (VDDQ)

◆ Power down controlled by ZZ input

◆ Packaged in a JEDEC standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine

pitch ball grid array(fBGA)

◆ Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆ Green parts available, see ordering information