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71V67603S150BQ

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BQ

包裝：托盤 封裝/外殼：165-TBGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 9MBIT PARALLEL 165CABGA

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BQ8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BQG

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BQG8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BQI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BQI8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BQG

包裝：托盤 封裝/外殼：165-TBGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 9MBIT PARALLEL 165CABGA

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BQG8

包裝：托盤 封裝/外殼：165-TBGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 9MBIT PARALLEL 165CABGA

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V67603S150BGG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S150BGGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S150BQG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S150BQGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S150PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S150PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S150PFI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號：

    71V67603S150BQ

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    托盤

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術(shù)：

    SRAM - 同步，SDR

  • 存儲容量：

    9Mb（256K x 36）

  • 存儲器接口：

    并聯(lián)

  • 電壓 - 供電：

    3.135V ~ 3.465V

  • 工作溫度：

    0°C ~ 70°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    165-TBGA

  • 供應(yīng)商器件封裝：

    165-CABGA（13x15）

  • 描述：

    IC SRAM 9MBIT PARALLEL 165CABGA

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS(瑞薩)/IDT
2022+原裝正品
CABGA-165(13x15)
18000
支持工廠BOM表配單 公司只做原裝正品貨
 詢價
IDT
23+
BGA
98900
原廠原裝正品現(xiàn)貨!!
 詢價
IDT
16+
BGA
2500
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
IDT
BGAQFP
6688
15
現(xiàn)貨庫存
 詢價
IDT, Integrated Device Technol
21+
64-LBGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
 詢價
IDT, Integrated Device Technol
21+
165-CABGA(13x15)
56200
一級代理/放心采購
 詢價
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
RENESAS(瑞薩)/IDT
2117+
CABGA-165(13x15)
315000
136個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長
 詢價
IDT
20+
BGA-165
136
就找我吧!--邀您體驗愉快問購元件!
 詢價
Renesas
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
 詢價
更多71V67603S150BQ供應(yīng)商 更新時間2024-11-7 15:00:00

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