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71V67903S80BQI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67903S80BQI

包裝：卷帶（TR） 封裝/外殼：165-TBGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 9MBIT PARALLEL 165CABGA

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67903S80BQI8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67903S80BQI8

包裝：卷帶（TR） 封裝/外殼：165-TBGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 9MBIT PARALLEL 165CABGA

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67903S80PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67903S80PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V67903S80BG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67903S80BGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67903S80BQ

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67903S80BQI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67903S80PF

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67903S80PFI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

產品屬性

  • 產品編號：

    71V67903S80BQI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    卷帶（TR）

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術：

    SRAM - 同步，SDR

  • 存儲容量：

    9Mb（512K x 18）

  • 存儲器接口：

    并聯(lián)

  • 電壓 - 供電：

    3.135V ~ 3.465V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    165-TBGA

  • 供應商器件封裝：

    165-CABGA（13x15）

  • 描述：

    IC SRAM 9MBIT PARALLEL 165CABGA

供應商型號品牌批號封裝庫存備注價格
IDT, Integrated Device Technol
21+
60-TFBGA
5280
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營
 詢價
IDT, Integrated Device Technol
21+
165-CABGA(13x15)
56200
一級代理/放心采購
 詢價
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IDT
20+
BGA-165
136
就找我吧!--邀您體驗愉快問購元件!
 詢價
IDT, Integrated Device Technol
21+
NA
11200
正品專賣,進口原裝深圳現(xiàn)貨
 詢價
Renesas
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
 詢價
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細信息,
 詢價
Integrated Device Technology
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
Renesas Electronics Corporatio
23+/24+
165-TBGA
8600
只供原裝進口公司現(xiàn)貨+可訂貨
 詢價
更多71V67903S80BQI供應商 更新時間2024-11-6 13:02:00

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