零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
740C | GENERAL PURPOSE BARATRON CAPACITANCE MANOMETERS | MKS MKS Instruments. | MKS | |
10Amps竊?00VN-CHANNELMOSFET | KIAKIA Semiconductor Technology 可易亞半導體廣東可易亞半導體科技有限公司 | KIA | ||
3M??SMPAdhesiveSealant740UV | 3M 3M Electronics | 3M | ||
3M??700-SeriesSMPProducts | 3M 3M Electronics | 3M | ||
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | Intersil Intersil Corporation | Intersil | ||
4A,18VHighEfficiencySynchronousStep-DownConverter | ACE ACE Technology Co., LTD. | ACE | ||
OpticallyIsolatedSigma-DeltaModulator | BOARDCOMBroadcom Corporation. 博通公司博通半導體 | BOARDCOM | ||
Socket478Pentium?4/Celeron?D/CeleronProcessor-basedATXwithVGA/DualLAN | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
GLASSPACKAGESTEPRECOVERYDIODE DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?HermeticGlassPackage | ASI Advanced Semiconductor | ASI | ||
GLASSPACKAGESTEPRECOVERYDIODE DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?HermeticGlassPackage | ASI Advanced Semiconductor | ASI | ||
GLASSPACKAGESTEPRECOVERYDIODE DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?HermeticGlassPackage | ASI Advanced Semiconductor | ASI | ||
HIGHCURRENTPHASECONTROL | POSEICO Power Semiconductors | POSEICO | ||
10A400VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導體江蘇東海半導體股份有限公司 | WXDH | ||
NPNSiliconGermaniumRFTransistor ProductBrief TheBFP740isalinearverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4.0VandcurrentsuptoIC=45 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNTransistors ■Features ●HighgainultralownoiseRFtransistor ●Highmaximumstablegain ●Goldmetallizationforextrahighreliability ●150GHzfT-SiliconGermaniumtechnology ●OutstandingnoisefigureF=0.5dBat1.8GHz OutstandingnoisefigureF=0.85dBat6GHz | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
RobustHighPerformanceLowNoiseBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
RobustLowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconGermaniumRFTransistor NPNSiliconGermaniumRFTransistor ?HighgainultralownoiseRFtransistor ?Providesoutstandingperformancefor awiderangeofwirelessapplications upto10GHzandmore ?IdealforCDMAandWLANapplications ?OutstandingnoisefigureF=0.5dBat1.8GHz Outstandingnoise | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
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1935+ |
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656 |
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22+ |
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2000 |
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292 |
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相關(guān)規(guī)格書
更多- 740EA102B
- 740EA103B
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- 740H
- 740H-12-1A0-2BXX
- 740H-12-1C0-2BXX
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- 740W-D/01
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- 740W-D/06
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- 740W-D-02
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- 740W-E-04
- 740W-F-02
- 740W-G/01
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相關(guān)庫存
更多- 740EA102J
- 740EA103J
- 740EA115J
- 740H-12-1A0-1BXX
- 740H-12-1C0-1BXX
- 740HA102B
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- 740UV
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- 740W-A/02
- 740W-A-02
- 740W-B/02
- 740W-B-01
- 740W-B-03
- 740W-C/02
- 740W-C-01
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- 740W-D/03
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- 740W-F/02
- 740W-F-02
- 740W-G-01
- 740W-H-01
- 740X043