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IRF7413

GenerationVTechnology

GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRF7413

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=12A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

IRF7413

PowerMOSFET(Vdss=30V,Id=12A)

SMPSMOSFET Benefits ?LowGatetoDrainChargetoReduce SwitchingLosses ?FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ?FullyCharacterizedAvalancheVoltage andCurrent Applications ?HighfrequencyDC-DCconverters

IRF

International Rectifier

IRF7413

MOSFET

Application GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Features VDS(V)=30V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF7413A

PowerMOSFET(Vdss=30V,Rds(on)=0.0135ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF7413GPBF

UltraLowOn-Resistance

IRF

International Rectifier

IRF7413GTRPBF

GenerationVTechnology

IRF

International Rectifier

IRF7413PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF7413PBF

ULTARLOWONRESISTANCE

IRF

International Rectifier

IRF7413QPBF

HEXFETPowerMOSFET

Description TheseHEXFET?PowerMOSFETsinSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveaval

IRF

International Rectifier

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Belden
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80
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21257
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24+
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2000
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進(jìn)口原裝
23+
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1050
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17+
6200
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2020+
80000
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TI
23+
3000
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18
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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TI
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2000
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18
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更多7413WS供應(yīng)商 更新時(shí)間2025-4-17 10:08:00

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