74AUP1G373GN集成電路（IC）的鎖存器規(guī)格書PDF中文資料

廠商型號	74AUP1G373GN
參數屬性	74AUP1G373GN 封裝/外殼為6-XFDFN；包裝為管件；類別為集成電路（IC）的鎖存器；產品描述：IC LATCH D-TYPE 6XSON
功能描述	Low-power D-type transparent latch; 3-state
絲印標識	aW
封裝外殼	SOT1115 / 6-XFDFN
文件大小	302.66 Kbytes
頁面數量	20 頁
生產廠商	Nexperia B.V. All rights reserved
企業(yè)簡稱	NEXPERIA【安世】
中文名稱	安世半導體(中國)有限公司官網
原廠標識
數據手冊	下載地址一下載地址二到原廠下載
更新時間	2025-3-4 22:58:00
人工找貨	74AUP1G373GN價格和庫存，歡迎聯(lián)系客服免費人工找貨

1. General description

The 74AUP1G373 is a single D-type transparent latch; 3-state. Schmitt-trigger action at all inputs

makes the circuit tolerant of slower input rise and fall times. This device ensures very low static

and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is

fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output,

preventing the potentially damaging backflow current through the device when it is powered down.

2. Features and benefits

? Wide supply voltage range from 0.8 V to 3.6 V

? High noise immunity

? CMOS low power dissipation

? Low static power consumption; ICC = 0.9 μA (maximum)

? Overvoltage tolerant inputs to 3.6 V

? Low noise overshoot and undershoot < 10 of VCC

? IOFF circuitry provides partial Power-down mode operation

? Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

? Complies with JEDEC standards:

? JESD8-12 (0.8 V to 1.3 V)

? JESD8-11 (0.9 V to 1.65 V)

? JESD8-7 (1.65 V to 1.95 V)

? JESD8-5 (2.3 V to 2.7 V)

? JESD8C (2.7 V to 3.6 V)

? ESD protection:

? HBM JESD22-A114F Class 3A exceeds 5000 V

? MM JESD22-A115-A exceeds 200 V

? CDM JESD22-C101E exceeds 1000 V

? Multiple package options

? Specified from -40 °C to +85 °C and -40 °C to +125 °C