74AUP1G386GW集成電路（IC）的門反相器規(guī)格書PDF中文資料

廠商型號	74AUP1G386GW
參數(shù)屬性	74AUP1G386GW 封裝/外殼為6-TSSOP，SC-88，SOT-363；包裝為卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶；類別為集成電路（IC）的門反相器；產(chǎn)品描述：IC GATE XOR 1CH 3-INP 6TSSOP
功能描述	Low-power 3-input EXCLUSIVE-OR gate
絲印標識	aH
封裝外殼	SOT363-2 / 6-TSSOP，SC-88，SOT-363
文件大小	255.35 Kbytes
頁面數(shù)量	16 頁
生產(chǎn)廠商	Nexperia B.V. All rights reserved
企業(yè)簡稱	NEXPERIA【安世】
中文名稱	安世半導體(中國)有限公司官網(wǎng)
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二到原廠下載
更新時間	2025-2-13 0:45:00

1. General description

The 74AUP1G386 is a single 3-input EXCLUSIVE-OR gate. Schmitt-trigger action at all inputs

makes the circuit tolerant of slower input rise and fall times. This device ensures very low static

and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is

fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output,

preventing the potentially damaging backflow current through the device when it is powered down.

2. Features and benefits

? Wide supply voltage range from 0.8 V to 3.6 V

? CMOS low power dissipation

? High noise immunity

? Overvoltage tolerant inputs to 3.6 V

? Low static power consumption; ICC = 0.9 μA (maximum)

? Low noise overshoot and undershoot < 10 of VCC

? IOFF circuitry provides partial Power-down mode operation

? Latch-up performance exceeds 100 mA per JESD 78 Class II

? Complies with JEDEC standards:

? JESD8-12 (0.8 V to 1.3 V)

? JESD8-11 (0.9 V to 1.65 V)

? JESD8-7 (1.2 V to 1.95 V)

? JESD8-5 (1.8 V to 2.7 V)

? JESD8-B (2.7 V to 3.6 V)

? ESD protection:

? HBM JESD22-A114F Class 3A exceeds 5000 V

? MM JESD22-A115-A exceeds 200 V

? CDM JESD22-C101E exceeds 1000 V

? Multiple package options

? Specified from -40 °C to +85 °C and -40 °C to +125 °C