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74VHCT08

Quad 2-input AND gate

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

74VHCT08A

QUAD 2-INPUT AND GATE

DESCRIPTION The74VHCT08Aisanadvancedhigh-speedCMOSQUAD2-INPUTANDGATEfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=4.7ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION:ICC=2μA(MAX.)atTA=25°C ■COMPATIBLEWITHTTLOUTPU

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

74VHCT08A

Quad 2-Input AND Gate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AFT

CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription ?Quad2-InputANDGate General The74VHCT08AFTisanadvancedhighspeedCMOS2-INPUTANDGATEfabricatedwithsilicongateC2MOS technology. ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOS lowpowerdissipa

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

74VHCT08AM

QUAD 2-INPUT AND GATE

DESCRIPTION The74VHCT08Aisanadvancedhigh-speedCMOSQUAD2-INPUTANDGATEfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=4.7ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION:ICC=2μA(MAX.)atTA=25°C ■COMPATIBLEWITHTTLOUTPU

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

74VHCT08AM

Quad 2-Input AND Gate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AMTC

Quad 2-Input AND Gate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AMTCX

Quad 2-Input AND Gate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AMTCX_NL

Quad 2-Input AND Gate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AMX

Quad 2-Input AND Gate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AMX_NL

Quad 2-Input AND Gate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AN

Quad 2-Input AND Gate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08ANX

Quad 2-Input AND Gate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08ASJ

Quad 2-Input AND Gate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08ASJX

Quad 2-Input AND Gate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AT

QUAD 2-INPUT AND GATE

DESCRIPTION The74VHCT08Aisanadvancedhigh-speedCMOSQUAD2-INPUTANDGATEfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=4.7ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION:ICC=2μA(MAX.)atTA=25°C ■COMPATIBLEWITHTTLOUTPU

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

74VHCT08A

QUAD 2-INPUT AND GATE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

74VHCT08A

Quad 2-Input AND Gate

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

74VHCT08A_04

QUAD 2-INPUT AND GATE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

74VHCT08A_08

Quad 2-Input AND Gate

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    74VHCT08

  • 制造商:

    Fairchild Semiconductor Corporation

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3081
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2000
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TI
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10265
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ST
22+
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2987
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FAIRCHILD
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25000
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608900
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NATIONAL
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更多74VHCT08供應(yīng)商 更新時(shí)間2024-11-8 10:50:00