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V62/22607-04XE

Marking：7H5008PW；Package：TSSOP；TPS7H500x-SEP Radiation-Tolerant 2-MHz Current Mode PWM Controllers in Space Enhanced Plastic

1Features ?Radiationhardened: –SEL,SEB,andSEGRimmuneto LET=43MeV-cm2/mg –SETandSEFIcharacterizedupto LET=43MeV-cm2/mg –TIDassuredforeverywaferlotupto 50krad(Si) ?Inputvoltage:4Vto14V ?0.613-V+0.7/–1voltagereferenceover temperature,radiation,and

TITexas Instruments

德州儀器美國德州儀器公司

V62/23602-01XE

Marking：7H1111PWP；Package：HTSSOP；TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TI1Texas Instruments

德州儀器

V62/23602-01XE

Marking：7H1111PWP；Package：HTSSOP；TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TI1Texas Instruments

德州儀器

V62/23610-01XE

Marking：7H2140PWP；Package：HTSSOP；TPS7H2140-SEP Radiation-Tolerant 32-V, 160-mΩ Quad-Channel eFuse

1Features ?Vendoritemdrawingavailable,VIDV62/23610 ?Totalionizingdose(TID)characterizedto 30krad(Si) –RLAT(radiationlotacceptancetesting)to 20krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatch-up(SEL),single-event burnout(SEB),andsingle-event

TITexas Instruments

德州儀器美國德州儀器公司

V62SLASH22607-01XE

Marking：7H5005PW；Package：TSSOP；TPS7H500x-SEP Radiation-Tolerant 2-MHz Current Mode PWM Controllers in Space Enhanced Plastic

1Features ?Radiationhardened: –SEL,SEB,andSEGRimmuneto LET=43MeV-cm2/mg –SETandSEFIcharacterizedupto LET=43MeV-cm2/mg –TIDassuredforeverywaferlotupto 50krad(Si) ?Inputvoltage:4Vto14V ?0.613-V+0.7%/–1%voltagereferenceover temperature,radi

TITexas Instruments

德州儀器美國德州儀器公司

V62SLASH22607-02XE

Marking：7H5006PW；Package：TSSOP；TPS7H500x-SEP Radiation-Tolerant 2-MHz Current Mode PWM Controllers in Space Enhanced Plastic

1Features ?Radiationhardened: –SEL,SEB,andSEGRimmuneto LET=43MeV-cm2/mg –SETandSEFIcharacterizedupto LET=43MeV-cm2/mg –TIDassuredforeverywaferlotupto 50krad(Si) ?Inputvoltage:4Vto14V ?0.613-V+0.7%/–1%voltagereferenceover temperature,radi

TITexas Instruments

德州儀器美國德州儀器公司

V62SLASH22607-03XE

Marking：7H5007PW；Package：TSSOP；TPS7H500x-SEP Radiation-Tolerant 2-MHz Current Mode PWM Controllers in Space Enhanced Plastic

1Features ?Radiationhardened: –SEL,SEB,andSEGRimmuneto LET=43MeV-cm2/mg –SETandSEFIcharacterizedupto LET=43MeV-cm2/mg –TIDassuredforeverywaferlotupto 50krad(Si) ?Inputvoltage:4Vto14V ?0.613-V+0.7%/–1%voltagereferenceover temperature,radi

TITexas Instruments

德州儀器美國德州儀器公司

V62SLASH22607-04XE

Marking：7H5008PW；Package：TSSOP；TPS7H500x-SEP Radiation-Tolerant 2-MHz Current Mode PWM Controllers in Space Enhanced Plastic

1Features ?Radiationhardened: –SEL,SEB,andSEGRimmuneto LET=43MeV-cm2/mg –SETandSEFIcharacterizedupto LET=43MeV-cm2/mg –TIDassuredforeverywaferlotupto 50krad(Si) ?Inputvoltage:4Vto14V ?0.613-V+0.7%/–1%voltagereferenceover temperature,radi

TITexas Instruments

德州儀器美國德州儀器公司

V62SLASH23602-01XE

Marking：7H1111PWP；Package：HTSSOP；TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TI1Texas Instruments

德州儀器

V62SLASH23602-01XE

Marking：7H1111PWP；Package：HTSSOP；TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TI1Texas Instruments

德州儀器

詳細(xì)參數(shù)

  • 型號：

    7H

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    Silicon N Channel MOS FET High Speed Power Switching

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更多7H供應(yīng)商 更新時間2025-4-25 9:30:00

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