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AN8090

OVERVOLTAGEPROTECTIVECIRCUIRSBUILT-INSWITCHINGPOWERSUPPLY

Overview TheAN8090andtheAN8090Senableshigh-speedcontrolupto500kHzandhavevariousprotectivefunctionsforover-current,overvoltage,andthermalprotectionnordertoimprovereliabilityofthepowersupply.

PanasonicPanasonic Semiconductor

松下松下電器

AN8090S

OVERVOLTAGEPROTECTIVECIRCUIRSBUILT-INSWITCHINGPOWERSUPPLY

Overview TheAN8090andtheAN8090Senableshigh-speedcontrolupto500kHzandhavevariousprotectivefunctionsforover-current,overvoltage,andthermalprotectionnordertoimprovereliabilityofthepowersupply.

PanasonicPanasonic Semiconductor

松下松下電器

AND8090

ACCharacteristicsofECLDevices

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

AND8090D

3.3V/5VECL2-InputDifferentialXOR/XNOR

Description TheMC10/100EP08isadifferentialXOR/XNORgate.TheEP08isidealforapplicationsrequiringthefastestACperformanceavailable. The100Seriescontainstemperaturecompensation. Features ?250psTypicalPropagationDelay ?MaximumFrequency>3GHzTypical ?PECLModeOpera

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

AND8090D

ACCharacteristicsofECLDevices

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

APT8090AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT8090BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT8090BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT8090HN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AW8090A

1.25WClass-ABAudioPowerAmplifierwithRFNoiseSuppression

AWINICShanghai awinic technology co.,ltd

艾為電子上海艾為電子技術(shù)股份有限公司

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SK
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TO263
8890
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1816+
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6523
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23+
TO263
5000
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SK
98+
TO220/
2890
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SK
17+
TO220/
9988
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Davies
22+
NA
489
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24+
5000
公司存貨
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KeystoneElectronics
新
624
全新原裝 貨期兩周
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Keystone Electronics
2022+
620
全新原裝 貨期兩周
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Keystone Electronics Corp
2023+
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8700
原裝現(xiàn)貨
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更多8090JD供應(yīng)商 更新時間2025-2-10 16:35:00

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