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FIR80N085PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

IXFC80N085

HiPerFETMOSFETISOPLUS220

Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFC80N085

HIPERFET-TMMOSFETISOPLUS220-TM

Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFC80N085

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=85V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH80N085

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=85V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH80N085

HiPerFETTMPowerMOSFETs

Features ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInductiveloadswitching(UIS) ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFT80N085

HiPerFETTMPowerMOSFETs

Features ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInductiveloadswitching(UIS) ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

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更多80N085供應(yīng)商 更新時(shí)間2025-1-21 15:18:00

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